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DG417B/418B/419B
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417B series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. To achieve high-voltage ratings and superior switching performance, the DG417B series is built on Vishay Siliconix's high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419B, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. The DG417B and DG418B respond to opposite control logic levels as shown in the Truth Table.
FEATURES
* * * * * 15 V Analog Signal Range On-Resistance - rDS(on): 15 Fast Switching Action - tON: 110 ns TTL and CMOS Compatible MSOP-8 and SOIC-8 Package
Pb-free Available
RoHS*
COMPLIANT
BENEFITS
* * * * * * Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Reduced Board Space Improved Reliability
APPLICATIONS
* * * * * * * Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems Hard Disk Drivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B
Dual-In-Line, SOIC-8 and MSOP-8 S NC GND V+ 1 2 3 4 Top View 8 7 6 5 D VIN VL
TRUTH TABLE
Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V DG417B ON OFF DG418B OFF ON
DG419B
Dual-In-Line, SOIC-8 and MSOP-8 D S1 GND V+ 1 2 3 4 Top View 8 7 6 5 S2 VIN VL
TRUTH TABLE - DG419B
Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V SW1 ON OFF SW2 OFF ON
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72107 S-71009-Rev. C, 14-May-07 www.vishay.com 1
DG417B/418B/419B
Vishay Siliconix
ORDERING INFORMATION
Temp Range DG417B/418B Package Part Number DG417BDJ DG417BDJ-E3 DG418BDJ DG418BDJ-E3 DG417BDY DG417BDY-E3 DG417BDY-T1 DG417BDY-T1-E3 DG418BDY DG418BDY-E3 DG418BDY-T1 DG418BDY-T1-E3 DG417BDQ-T1-E3 DG418BDQ-T1-E3 DG419BDJ DG419BDJ-E3 DG419BDY DG419BDY-E3 DG419BDY-T1 DG419BDY-T1-E3 DG419BDQ-T1-E3
8-Pin Plastic MiniDIP
- 40 to 85 C 8-Pin Narrow SOIC
8-Pin MSOP DG419B 8-Pin Plastic MiniDIP - 40 to 85 C
8-Pin Narrow SOIC 8-Pin MSOP
ABSOLUTE MAXIMUM RATINGS
Parameter VV+ GND VL Digital Inputsa, VS, VD Current, (Any Terminal) Continuous Current (S or D) Pulsed at 1 ms, 10 % duty cycle Storage Temperature 8-Pin Plastic MiniDIP Power Dissipation (Package)
b c
Limit - 20 20 25 (GND - 0.3 V) to (V+) + 0.3 (V-) - 2 V to (V+) + 2 or 30 mA, whichever occurs first 30 100 - 65 to 150 400 400 400 600 8-Pin Narrow SOICc 8-Pin MSOP
d
Unit
V
mA C
mW
8-Pin CerDIPe
Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 5.3 mW/C above 75 C. d. Derate 4 mW/C above 70 C. e. Derate 8 mW/C above 75 C.
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Document Number: 72107 S-71009-Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S VL VVIN Level Shift/ Drive V+ GND D
V-
Figure 1.
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Symbol VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) V+ = 16.5, V- = - 16.5 V DG417B VD = 15.5 V, VS = 15.5 V DG418B DG419B DG417B DG418B DG419B IS = - 10 mA, VD = 12.5 V V+ = 13.5 V, V- = - 13.5 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Full Room Full Room Full Room Full Room Full Room Full Room Full Full Full RL = 300 , CL = 35 pF VS = 10 V, See Switching Time Test Circuit RL = 300 , CL = 35 pF VS1 = 10 V, VS2 = 10 V RL = 300 , CL = 35 pF VS1 = VS2 = 10 V DG417B DG418B DG417B DG418B DG419B DG419B Room Full Room Full Room Full Room Room Room Room 15 Typc A Suffix - 55 to 125 C Mind - 15 Maxd 15 25 34 - 0.25 - 20 - 0.25 - 20 - 0.75 - 60 - 0.4 - 40 - 0.75 - 60 - 0.5 - 0.5 0.25 20 0.25 20 0.75 60 0.4 40 0.75 60 0.5 0.5 89 106 80 88 87 96 3 3 pC - 0.25 -5 - 0.25 -5 - 0.75 - 12 - 0.4 - 10 - 0.75 - 12 - 0.5 - 0.5 D Suffix - 40 to 85 C Mind - 15 Maxd 15 25 29 0.25 5 0.25 5 0.75 12 0.4 10 0.75 12 0.5 0.5 89 99 80 86 87 93 ns Unit V
- 0.1 - 0.1 - 0.1 - 0.4 - 0.4
nA
Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High Dynamic Characteristics Turn-On Time Turn-Off Time Transition Time Break-Before-Make Time Delay Charge Injection Off Isolatione Channel-to-Channel Crosstalke
ID(on)
V+ = 16.5 V, V- = - 16.5 V VS = VD = 15.5 V
IIL IIH tON tOFF tTRANS tD Q OIRR XTALK
A
62 53 60 16 4 - 86
CL = 10 nF Vgen = 0 V, Rgen = 0 RL = 50 , CL = 5 pF, f = 1 MHz DG419B
dB - 87
Document Number: 72107 S-71009-Rev. C, 14-May-07
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DG417B/418B/419B
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Source Off Capacitance Drain Off Capacitancee Channel On Capacitancee Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IIL IGND V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Room Full Room Full Room Full Room Full 0.001 - 0.001 0.001 - 0.001 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5 A
e
A Suffix - 55 to 125 C Tempb Room Room Room Room Typc 12 12 Mind Maxd
D Suffix - 40 to 85 C Mind Maxd Unit
Symbol CS(off) CD(off)
VL = 5 V, VIN = 2.4 V, 0.8 Vf f = 1 MHz, VS = 0 V DG417B DG418B DG417B DG418B DG419B
pF 50 57
CD(on)
f = 1 MHz, VS = 0 V
SPECIFICATIONSa
Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Transition Time Charge Injection Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IIL IGND V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V Room Full Room Room Room 0.001 - 0.001 0.001 - 0.001 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5 A tON tOFF tD tTRANS Q RL = 300 , CL = 35 pF VS = 8 V, See Switching Time Test Circuit RL = 300 , CL = 35 pF RL = 300 , CL = 35 pF VS1 = 0 V, 8 V, VS2 = 8 V, 0 V CL = 10 nF, Vgen = 0 V, Rgen = 0 Room Full Room Full DG419B Room Room Full Room 100 38 62 95 3 25 119 153 125 155 66 73 25 119 141 pC 125 143 66 69 Symbol VANALOG rDS(on) IS = - 10 mA, VD = 3.8 V V+ = 10.8 V, VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Full Room Full 26 Typc A Suffix - 55 to 125 C Mind 0 Maxd 12 35 52 D Suffix - 40 to 85 C Mind 0 Maxd 12 35 45 Unit V
ns
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 72107 S-71009-Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
300 rDS(on) - Drain-Source On-Resistance ( ) rDS(on) - Drain-Source On-Resistance ( ) TA = 25 C VL = 5 V 40 TA = 25 C 35 30 25 8V 20 15 10 20 V 5 - 20 - 15 - 10 -5 0 5 10 15 20 10 V 12 V 15 V 5V
250
200 V+ = 3.0 V VL = 3 V V+ = 12.0 V V+ = 5.0 V 50 V+ = 8.0 V V+ = 15.0 V V+ = 20.0 V
150
100
0 0 4 8 12 16 20 VD - Drain Voltage (V)
VD - Drain Voltage (V)
On-Resistance vs. VD and Unipolar Power Supply Voltage
30 rDS(on) - Drain-Source On-Resistance ( ) V = 15 V VL = 5 V 25 rDS(on) - Drain-Source On-Resistance ( )
On-Resistance vs. VD and Dual Supply Voltage
50 45 40 35 30 25 - 55 C 20 15 10 5 V+ = 12 V V- = 0 V VL = 5 V 0 2 4 6 8 10 12 125 C 85 C 25 C
20
125 C 85 C
15
25 C - 55 C
10
5 - 15
- 10
-5
0
5
10
15
VD - Drain Voltage (V)
VD - Drain Voltage (V)
On-Resistance vs. VD and Temperature
100 80 60 40 ID, IS (pA) 20 0 - 20 - 40 - 60 - 80 - 100 -15 IS(off) ID(off) ID(on) V = 15 V VL = 5 V TA = 25 C 100 m 10 m I+ - Supply Current (nA) 1m 100 10 1 100 n 10 n 1n - 10 -5 0 5 10 15 100 p 10
On-Resistance vs. VD and Temperature
V = 15 V VL = 5 V
I+, I-
IL
100
1K
10 K
100 K
1M
10 M
VD or VS - Drain or Source Voltage (V)
Input Switching Frequency (Hz)
Leakage vs. Analog Voltage
Supply Current vs. Input Switching Frequency
Document Number: 72107 S-71009-Rev. C, 14-May-07
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DG417B/418B/419B
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
140 VL = 5 V 90 120 tON V = 12 V 100 t ON , t OFF (ns) t ON , t OFF (ns) 80 70 60 50 40 30 20 - 55 tTRANStTRANS+ 100 V = 15 V VL = 5 V
80 tON V = 15 V 60 tOFF V = 15 V tOFF V = 12 V 40
20 - 55
- 35
- 15
5
25
45
65
85
105
125
- 35
- 15
5
25
45
65
85
105
125
Temperature ( C)
Temperature ( C)
Switching Time vs. Temperature
140 V+ = 12 V V- = 0 V VL = 5 V tTRANSLoss, OIRR, X TALK (dB)
Transition Time vs. Temperature
10 - 10 Loss
120
t ON , t OFF (ns)
100
- 30
XTALK OIRR
80 tTRANS+ 60
- 50
- 70 V+ = 3 V V- = 0 V RL = 50
40
- 90
20 - 55
- 110 - 35 - 15 5 25 45 65 85 105 125 100 k 1M 10 M Frequency (Hz) 100 M 1G Temperature ( C)
Transition Time vs. Temperature
3.0 VL = 5 V 2.5 Q - Charge Injection (pC) VT - Switching Threshold (V)
Insertation Loss, Off -Isolation Crosstalk vs. Frequency
30 25 20 15 10 5 0 -5 - 10 - 15 - 20 - 25 V+ = 12 V V = 15 V C = 10 nF
2.0
1.5
1.0
0.5
0.0 4 6 8 10 12 14 16 18 20 V+ - Supply Voltage (V)
- 30 - 15 - 12
-9
-6
-3
0
3
6
9
12
15
VS - Analog Voltage (V)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
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Document Number: 72107 S-71009-Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
VO is the steady state output with the switch on. +5V + 15 V Logic Input VL S 10 V IN GND V- RL 300 CL 35 pF V+ D 0V VO Switch Input VS VO 90 % tOFF 3V 50 %
tr < 5 ns tf < 5 ns
- 15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
Switch Output
0V tON
Note:
Logic input waveform is inverted for switches that have the opposite logic sense.
Figure 2. Switching Time (DG417B/418B)
+5V
+1V Logic Input 3V 0V D VO RL 300 CL 35 pF VS1 = VS2 VO Switch Output CL (includes fixture and stray capacitance) - 15 V 0V tD tD tr < 5 ns tf < 5 ns
VL VS1 VS2 S1 S2
V+
90 %
IN GND V-
Figure 3. Break-Before-Make (DG419B)
+5V VL VS1 VS2 S1 S2 IN GND VV+
+ 15 V 3V 50 % 0V tTRANS VS1 V01 Switch Output VS2 V02 10 % 90 % tTRANS tr < 5 ns tf < 5 ns
D VO RL 300 CL 35 pF
Logic Input
- 15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on)
Figure 4. Transition Time (DG419B)
Document Number: 72107 S-71009-Rev. C, 14-May-07
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DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
+5V + 15 V VO VO VO CL 10 nF VINX OFF ON OFF
Rg
VL S IN
V+ D
3V GND
Q = VO x CL
- 15 V
Figure 5. Charge Injection
+5V C VL VS Rg = 50 50 VO S2 S1 V+ D VL VS Rg = 50 0 V, 2.4 V RL 0.8 V GND VC - 15 V - 15 V XTALK Isolation = 20 log C = RF bypass VO VS Off Isolation = 20 log VO VS IN IN RL S
V+
+ 15 V C C +5V + 15 V C
D
VO
GND
V-
C
Figure 6. Crosstalk
Figure 7. Off isolation
+5V C VL VS Rg = 50 0 V, 2.4 V IN GND S
+ 15 V C V+ D VO RL
V-
C
- 15 V
Figure 8. Insertion Loss
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Document Number: 72107 S-71009-Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
+5V C VL
+ 15 V + 15 V C
V+
NC
C
DG417B/418B
S Meter
V+ S2
S1 Meter HP4192A Impedance Analyzer or Equivalent f = 1 MHz
DG419B
0 V, 2.4 V IN
0 V, 2.4 V
IN
D GND VC
HP4192A Impedance Analyzer or Equivalent f = 1 MHz
D2 GND V-
D1 C
- 15 V
- 15 V
Figure 9. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72107.
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Document Number: 72107 S-71009-Rev. C, 14-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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